Show Hamamatsu Avalanche Photo Diode 2503027756
This is all the information about APD 2503027756. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
2503027756 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
A07 |
Break-through voltage: |
414 V |
Voltage for Gain 100 (T=+25°C): |
385.9 V |
Dark current: |
5 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
60 |
Position in Box: |
23 |
EP1 batch: |
13 |
EP1 batch after irradiation: |
10096 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
19. Feb 2019 |
Sent for analysis after irradiation: |
01. Apr 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
27. Mar 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
27. Mar 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 386.7347704 V T = -25 °C: 351.0655963 V |
Voltage for Gain 150: |
T = +20 °C: 394.6545322 V T = -25 °C: 358.563475 V |
Voltage for Gain 200: |
T = +20 °C: 399.0396519 V T = -25 °C: 362.7576693 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.376794784 V-1 T = -25 °C: 4.820148694 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.471971337 V-1 T = -25 °C: 8.908787186 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.70074795 V-1 T = -25 °C: 16.01779158 V-1 |
Break-through voltage: |
T = +20 °C: 413.1131069 V T = -25 °C: 376.9265166 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history