Show Hamamatsu Avalanche Photo Diode 2503027747
This is all the information about APD 2503027747. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2503027747 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D15 |
Break-through voltage: |
412 V |
Voltage for Gain 100 (T=+25°C): |
385.7 V |
Dark current: |
4.2 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
60 |
Position in Box: |
17 |
EP1 batch: |
12 |
EP1 batch after irradiation: |
10096 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
19. Feb 2019 |
Sent for analysis after irradiation: |
01. Apr 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
27. Mar 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
27. Mar 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 385.9055122 V T = -25 °C: 350.1607397 V |
Voltage for Gain 150: |
T = +20 °C: 393.7868427 V T = -25 °C: 357.6465587 V |
Voltage for Gain 200: |
T = +20 °C: 398.139459 V T = -25 °C: 361.8303926 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.66848856 V-1 T = -25 °C: 4.861545855 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.360665596 V-1 T = -25 °C: 8.88542334 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.71208937 V-1 T = -25 °C: 15.91235866 V-1 |
Break-through voltage: |
T = +20 °C: 411.4450732 V T = -25 °C: 375.3949273 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history