Show Hamamatsu Avalanche Photo Diode 2503027729
This is all the information about APD 2503027729. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2503027729 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
In transit to Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E01 |
| Break-through voltage: |
410 V |
| Voltage for Gain 100 (T=+25°C): |
381 V |
| Dark current: |
3.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
60 |
| Position in Box: |
10 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10666 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
19. Feb 2019 |
| Sent for analysis after irradiation: |
01. Apr 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
27. Mar 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Mar 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
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|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 381.3193304 V T = -25 °C: 346.1252115 V |
| Voltage for Gain 150: |
T = +20 °C: 389.2658733 V T = -25 °C: 353.5982056 V |
| Voltage for Gain 200: |
T = +20 °C: 393.6943746 V T = -25 °C: 357.7901553 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.46087469 V-1 T = -25 °C: 4.845230928 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.554185296 V-1 T = -25 °C: 9.700447117 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.71985302 V-1 T = -25 °C: 15.2892136 V-1 |
| Break-through voltage: |
T = +20 °C: 409.0492158 V T = -25 °C: 373.1827447 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
