Show Hamamatsu Avalanche Photo Diode 2502027671
This is all the information about APD 2502027671. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
2502027671 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
H08 |
Break-through voltage: |
409 V |
Voltage for Gain 100 (T=+25°C): |
382.6 V |
Dark current: |
3.6 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
59 |
Position in Box: |
42 |
EP1 batch: |
11 |
EP1 batch after irradiation: |
10095 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
19. Feb 2019 |
Sent for analysis after irradiation: |
01. Apr 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
27. Mar 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
27. Mar 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 381.4329639 V T = -25 °C: 347.5992959 V |
Voltage for Gain 150: |
T = +20 °C: 389.4355302 V T = -25 °C: 354.8569134 V |
Voltage for Gain 200: |
T = +20 °C: 393.9196485 V T = -25 °C: 358.9121621 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.380955339 V-1 T = -25 °C: 4.91767482 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.616315981 V-1 T = -25 °C: 9.151088467 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.18061921 V-1 T = -25 °C: 16.94989295 V-1 |
Break-through voltage: |
T = +20 °C: 404.8929948 V T = -25 °C: 373.9254934 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history