Show Hamamatsu Avalanche Photo Diode 2501027637
This is all the information about APD 2501027637. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2501027637 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E09 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
379.9 V |
| Dark current: |
4.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
59 |
| Position in Box: |
15 |
| EP1 batch: |
11 |
| EP1 batch after irradiation: |
10094 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
19. Feb 2019 |
| Sent for analysis after irradiation: |
01. Apr 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
27. Mar 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Mar 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.9012348 V T = -25 °C: 344.7181614 V |
| Voltage for Gain 150: |
T = +20 °C: 387.7856126 V T = -25 °C: 352.0727106 V |
| Voltage for Gain 200: |
T = +20 °C: 392.1765818 V T = -25 °C: 356.2100899 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.620119005 V-1 T = -25 °C: 4.6509516 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.203131563 V-1 T = -25 °C: 9.59012092 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.46667321 V-1 T = -25 °C: 15.25639529 V-1 |
| Break-through voltage: |
T = +20 °C: 407.9447862 V T = -25 °C: 371.4261614 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
