Show Hamamatsu Avalanche Photo Diode 2501027582
This is all the information about APD 2501027582. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2501027582 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2501027582/1912021206 |
| Unit: |
#3652 (barcode 1309039777) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F05 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
378.9 V |
| Dark current: |
4.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
58 |
| Position in Box: |
5 |
| EP1 batch: |
9 |
| EP1 batch after irradiation: |
10092 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
19. Feb 2019 |
| Sent for analysis after irradiation: |
01. Apr 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
27. Mar 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Mar 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.8539914 V T = -25 °C: 343.7302309 V |
| Voltage for Gain 150: |
T = +20 °C: 386.7317206 V T = -25 °C: 351.0956817 V |
| Voltage for Gain 200: |
T = +20 °C: 391.1118043 V T = -25 °C: 355.2334072 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.708521153 V-1 T = -25 °C: 4.704936837 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.31578646 V-1 T = -25 °C: 9.565133652 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.61009976 V-1 T = -25 °C: 15.26162115 V-1 |
| Break-through voltage: |
T = +20 °C: 407.0358431 V T = -25 °C: 370.9246875 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
