Show Hamamatsu Avalanche Photo Diode 2501027580
This is all the information about APD 2501027580. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2501027580 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2001021492/2501027580 |
| Unit: |
#3896 (barcode 1309037414) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A07 |
| Break-through voltage: |
413 V |
| Voltage for Gain 100 (T=+25°C): |
384.9 V |
| Dark current: |
8.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
58 |
| Position in Box: |
3 |
| EP1 batch: |
9 |
| EP1 batch after irradiation: |
10092 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
19. Feb 2019 |
| Sent for analysis after irradiation: |
01. Apr 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
27. Mar 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Mar 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 385.5862657 V T = -25 °C: 349.8990847 V |
| Voltage for Gain 150: |
T = +20 °C: 393.5234685 V T = -25 °C: 357.4005462 V |
| Voltage for Gain 200: |
T = +20 °C: 397.9266064 V T = -25 °C: 361.6256642 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.392609237 V-1 T = -25 °C: 4.923926195 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.535525157 V-1 T = -25 °C: 9.081202261 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.81473219 V-1 T = -25 °C: 16.19263145 V-1 |
| Break-through voltage: |
T = +20 °C: 411.9973254 V T = -25 °C: 375.9682852 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
