Show Hamamatsu Avalanche Photo Diode 2501027579
This is all the information about APD 2501027579. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2501027579 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2401025948/2501027579 |
| Unit: |
#1454 (barcode 1309016051) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
red |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E06 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
379.3 V |
| Dark current: |
4.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
58 |
| Position in Box: |
8 |
| EP1 batch: |
9 |
| EP1 batch after irradiation: |
10092 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
19. Feb 2019 |
| Sent for analysis after irradiation: |
01. Apr 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
27. Mar 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
27. Mar 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.6957714 V T = -25 °C: 344.3894601 V |
| Voltage for Gain 150: |
T = +20 °C: 387.5093357 V T = -25 °C: 351.7289553 V |
| Voltage for Gain 200: |
T = +20 °C: 391.8582619 V T = -25 °C: 355.8219789 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.464067146 V-1 T = -25 °C: 4.788135214 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.671247424 V-1 T = -25 °C: 10.05061634 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.18934617 V-1 T = -25 °C: 16.2572284 V-1 |
| Break-through voltage: |
T = +20 °C: 407.4758843 V T = -25 °C: 371.2756971 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
