Show Hamamatsu Avalanche Photo Diode 2501027562
This is all the information about APD 2501027562. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2501027562 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F04 |
Break-through voltage: |
409 V |
Voltage for Gain 100 (T=+25°C): |
379.9 V |
Dark current: |
4.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
27 |
Position in Box: |
41 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10666 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 380.0238487 V T = -25 °C: 344.887351 V |
Voltage for Gain 150: |
T = +20 °C: 387.8849096 V T = -25 °C: 352.2716592 V |
Voltage for Gain 200: |
T = +20 °C: 392.2772419 V T = -25 °C: 356.437811 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.625950784 V-1 T = -25 °C: 4.967027412 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.017416387 V-1 T = -25 °C: 9.218211173 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.0429592 V-1 T = -25 °C: 14.44561326 V-1 |
Break-through voltage: |
T = +20 °C: 407.8284133 V T = -25 °C: 371.9406912 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history