Show Hamamatsu Avalanche Photo Diode 2420027508
This is all the information about APD 2420027508. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2420027508 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2420027508/2402026046 |
| Unit: |
#1117 (barcode 1309012527) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E09 |
| Break-through voltage: |
405 V |
| Voltage for Gain 100 (T=+25°C): |
376.5 V |
| Dark current: |
5.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
27 |
| Position in Box: |
2 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10043 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jan 2019 |
| Sent for analysis after irradiation: |
28. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
21. Jan 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
22. Jan 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 376.5563028 V T = -25 °C: 341.4522084 V |
| Voltage for Gain 150: |
T = +20 °C: 384.3660859 V T = -25 °C: 348.8082138 V |
| Voltage for Gain 200: |
T = +20 °C: 388.7569633 V T = -25 °C: 352.8563632 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.44587952 V-1 T = -25 °C: 4.932726361 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.391686025 V-1 T = -25 °C: 8.967934674 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.58554226 V-1 T = -25 °C: 16.33622225 V-1 |
| Break-through voltage: |
T = +20 °C: 404.4229976 V T = -25 °C: 368.1281003 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
