Show Hamamatsu Avalanche Photo Diode 2420027506
This is all the information about APD 2420027506. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2420027506 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 2420027506/2419027430 |
Unit: |
#1642 (barcode 1309017485) |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
blue |
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Manufacturer information: |
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Wafer position: |
B09 |
Break-through voltage: |
409 V |
Voltage for Gain 100 (T=+25°C): |
381.1 V |
Dark current: |
5.2 nA |
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Screening Logistics: |
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Available: |
No |
Storage Box: |
26 |
Position in Box: |
50 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10043 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
16. Jan 2019 |
Sent for analysis after irradiation: |
28. Jan 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
21. Jan 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
22. Jan 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 382.120965 V T = -25 °C: 346.5228229 V |
Voltage for Gain 150: |
T = +20 °C: 389.9299233 V T = -25 °C: 353.8451752 V |
Voltage for Gain 200: |
T = +20 °C: 394.2400341 V T = -25 °C: 358.0030508 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.212310408 V-1 T = -25 °C: 4.804028196 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.743170064 V-1 T = -25 °C: 9.423857998 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.00250287 V-1 T = -25 °C: 15.88348118 V-1 |
Break-through voltage: |
T = +20 °C: 408.5323863 V T = -25 °C: 372.2789106 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history