Show Hamamatsu Avalanche Photo Diode 2420027501
This is all the information about APD 2420027501. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2420027501 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D15 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
381.3 V |
| Dark current: |
4.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
26 |
| Position in Box: |
31 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10043 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jan 2019 |
| Sent for analysis after irradiation: |
28. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
21. Jan 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
22. Jan 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 381.2762039 V T = -25 °C: 345.7026118 V |
| Voltage for Gain 150: |
T = +20 °C: 389.1075946 V T = -25 °C: 353.037618 V |
| Voltage for Gain 200: |
T = +20 °C: 393.4508574 V T = -25 °C: 357.1592273 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.738836735 V-1 T = -25 °C: 4.678130659 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.487351626 V-1 T = -25 °C: 9.550723887 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.42873443 V-1 T = -25 °C: 16.0436187 V-1 |
| Break-through voltage: |
T = +20 °C: 407.0078778 V T = -25 °C: 370.9910367 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
