Show Hamamatsu Avalanche Photo Diode 2415027152
This is all the information about APD 2415027152. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2415027152 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B12 |
| Break-through voltage: |
407 V |
| Voltage for Gain 100 (T=+25°C): |
378 V |
| Dark current: |
4.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
21 |
| Position in Box: |
13 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10034 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
16. Jan 2019 |
| Sent for analysis after irradiation: |
25. Jan 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
21. Jan 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
22. Jan 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.5484235 V T = -25 °C: 343.2679547 V |
| Voltage for Gain 150: |
T = +20 °C: 386.347126 V T = -25 °C: 350.6594904 V |
| Voltage for Gain 200: |
T = +20 °C: 390.7076118 V T = -25 °C: 354.8039622 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.65181776 V-1 T = -25 °C: 5.036064844 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.982630057 V-1 T = -25 °C: 9.170371291 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.32660283 V-1 T = -25 °C: 15.84112152 V-1 |
| Break-through voltage: |
T = +20 °C: 405.9347275 V T = -25 °C: 369.8569516 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
