Show Hamamatsu Avalanche Photo Diode 2412026876
This is all the information about APD 2412026876. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2412026876 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
A09 |
| Break-through voltage: |
418 V |
| Voltage for Gain 100 (T=+25°C): |
389.2 V |
| Dark current: |
7.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
17 |
| Position in Box: |
23 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10028 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
12. Nov 2018 |
| Sent for analysis after irradiation: |
26. Nov 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
22. Nov 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
23. Nov 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 390.2828635 V T = -25 °C: 353.9613166 V |
| Voltage for Gain 150: |
T = +20 °C: 398.1747454 V T = -25 °C: 361.5482643 V |
| Voltage for Gain 200: |
T = +20 °C: 402.5744704 V T = -25 °C: 365.8125655 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.358008095 V-1 T = -25 °C: 4.660448639 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.098264847 V-1 T = -25 °C: 9.102570473 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.47157323 V-1 T = -25 °C: 15.47543096 V-1 |
| Break-through voltage: |
T = +20 °C: 416.5957869 V T = -25 °C: 380.0686976 V |
| |
|
| Notes: |
foam
|
Characteristics
| Temperature |
Measurement |
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Progression of the current during irradiation
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Version history
