Show Hamamatsu Avalanche Photo Diode 2411026805
This is all the information about APD 2411026805. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2411026805 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B05 |
| Break-through voltage: |
415 V |
| Voltage for Gain 100 (T=+25°C): |
386.9 V |
| Dark current: |
5.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
16 |
| Position in Box: |
41 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10027 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
12. Nov 2018 |
| Sent for analysis after irradiation: |
13. Dec 2018 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
07. Dec 2018 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
10. Dec 2018 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 386.6209415 V T = -25 °C: 350.7612744 V |
| Voltage for Gain 150: |
T = +20 °C: 394.4916909 V T = -25 °C: 358.311093 V |
| Voltage for Gain 200: |
T = +20 °C: 398.8831515 V T = -25 °C: 362.5613317 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.608615809 V-1 T = -25 °C: 4.80209538 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.957133534 V-1 T = -25 °C: 9.436748501 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.31314895 V-1 T = -25 °C: 14.49708484 V-1 |
| Break-through voltage: |
T = +20 °C: 408.7950525 V T = -25 °C: 377.9697449 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
