Show Hamamatsu Avalanche Photo Diode 2411026804
This is all the information about APD 2411026804. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2411026804 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
A08 |
Break-through voltage: |
413 V |
Voltage for Gain 100 (T=+25°C): |
384.4 V |
Dark current: |
4.7 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
16 |
Position in Box: |
40 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10027 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
12. Nov 2018 |
Sent for analysis after irradiation: |
13. Dec 2018 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
07. Dec 2018 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
10. Dec 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 384.1733543 V T = -25 °C: 348.5930589 V |
Voltage for Gain 150: |
T = +20 °C: 392.07486 V T = -25 °C: 356.1033084 V |
Voltage for Gain 200: |
T = +20 °C: 396.4696136 V T = -25 °C: 360.3234617 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.440811135 V-1 T = -25 °C: 4.873032542 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.296676587 V-1 T = -25 °C: 9.681802398 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.13273145 V-1 T = -25 °C: 14.93297806 V-1 |
Break-through voltage: |
T = +20 °C: 406.5678226 V T = -25 °C: 376.1007284 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history