Show Hamamatsu Avalanche Photo Diode 2411026779
This is all the information about APD 2411026779. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2411026779 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 2412026906/2411026779 |
Unit: |
#2658 (barcode 1309025596) |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
red |
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Manufacturer information: |
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Wafer position: |
E04 |
Break-through voltage: |
416 V |
Voltage for Gain 100 (T=+25°C): |
387.9 V |
Dark current: |
4.5 nA |
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Screening Logistics: |
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Available: |
No |
Storage Box: |
16 |
Position in Box: |
15 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10026 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
12. Nov 2018 |
Sent for analysis after irradiation: |
13. Dec 2018 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
07. Dec 2018 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
10. Dec 2018 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 388.2341345 V T = -25 °C: 352.1269206 V |
Voltage for Gain 150: |
T = +20 °C: 396.0834736 V T = -25 °C: 359.6726257 V |
Voltage for Gain 200: |
T = +20 °C: 400.4014612 V T = -25 °C: 363.8952934 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.456090404 V-1 T = -25 °C: 4.746553409 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.492205321 V-1 T = -25 °C: 9.804462184 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.62709238 V-1 T = -25 °C: 14.73431313 V-1 |
Break-through voltage: |
T = +20 °C: 415.2106999 V T = -25 °C: 378.6707186 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history