Show Hamamatsu Avalanche Photo Diode 0611004859 - Archived data from Tue, 29. November 2016 11:53:15 CET
This is all the information about APD 0611004859. If it is wrong, edit the data.
Subdetector specification: | |
---|---|
Serial: | 0611004859 |
Type: | Hamamatsu Avalanche Photo Diode |
Detector: | unassigned |
Unit: | unassigned |
Preamp: | 0 |
Current location: | unknown |
Installation information: | |
Label: | none |
Manufacturer information: | |
Wafer position: | A08 |
Break-through voltage: | 454 V |
Voltage for Gain 100 (T=+25°C): | 426.1 V |
Dark current: | 14.2 nA |
Screening Logistics: | |
Available: | Yes |
Storage Box: | none |
Position in Box: | none |
EP1 batch: | none |
EP1 batch after irradiation: | none |
Shipment: | |
Grid number: | 634 |
Position in grid: | 2 |
Arrival for irradiation: | none |
Sent for analysis after irradiation: | none |
Return for assembly: | 29. Nov 2016 |
Irradiation: | |
Date: | none |
Dose used: | none |
Temperature: | none |
Position: | none |
Bias voltage: | none |
Annealing: | |
Date: | none |
Temperature: | none |
Duration: | none |
Measurement results: | |
Voltage for Gain 100: | T = +20 °C: none T = -25 °C: none |
Voltage for Gain 150: | T = +20 °C: none T = -25 °C: none |
Voltage for Gain 200: | T = +20 °C: none T = -25 °C: none |
Gain/Voltage slope at M = 100: | T = +20 °C: none T = -25 °C: none |
Gain/Voltage slope at M = 150: | T = +20 °C: none T = -25 °C: none |
Gain/Voltage slope at M = 200: | T = +20 °C: none T = -25 °C: none |
Break-through voltage: | T = +20 °C: none T = -25 °C: none |
Notes: |
Version history
Time | Author | Change comment |
---|---|---|
17. Apr 2021 01:10:01 CEST | jreher | Updated APD location via API. |
29. Nov 2016 11:53:15 CET | markus.moritz | Entered return for assembly date. |
21. Nov 2016 17:44:54 CET | Tobias | Assigned to grid via information extracted from APD DB. |
21. Nov 2016 17:27:48 CET | tobias | Manually added based on APD lab DB export. |