Show Hamamatsu Avalanche Photo Diode 0611004887
This is all the information about APD 0611004887. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
0611004887 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
C01 |
Break-through voltage: |
446 V |
Voltage for Gain 100 (T=+25°C): |
420.7 V |
Dark current: |
11.5 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
265 |
Position in Box: |
38 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10297 |
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Shipment: |
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Grid number: |
638 |
Position in grid: |
7 |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 419.6364787 V T = -25 °C: 382.4680133 V |
Voltage for Gain 150: |
T = +20 °C: 427.6073669 V T = -25 °C: 390.3720275 V |
Voltage for Gain 200: |
T = +20 °C: 431.9973592 V T = -25 °C: 394.7423364 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.337039546 V-1 T = -25 °C: 4.428465233 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.460742967 V-1 T = -25 °C: 8.73354927 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.7864869 V-1 T = -25 °C: 15.36103521 V-1 |
Break-through voltage: |
T = +20 °C: 440.00274 V T = -25 °C: 408.2833482 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history