Show Hamamatsu Avalanche Photo Diode 2319025767
This is all the information about APD 2319025767. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
2319025767 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 2703030222/2319025767 |
Unit: |
#1054 (barcode 1309011735) |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
red |
|
|
Manufacturer information: |
|
Wafer position: |
E13 |
Break-through voltage: |
410 V |
Voltage for Gain 100 (T=+25°C): |
381.1 V |
Dark current: |
4.6 nA |
|
|
Screening Logistics: |
|
Available: |
No |
Storage Box: |
220 |
Position in Box: |
29 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10225 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
21. Aug 2019 |
Sent for analysis after irradiation: |
15. Oct 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
09. Oct 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
12. Oct 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 380.9324397 V T = -25 °C: 345.7962641 V |
Voltage for Gain 150: |
T = +20 °C: 388.7637801 V T = -25 °C: 353.1648298 V |
Voltage for Gain 200: |
T = +20 °C: 393.1258338 V T = -25 °C: 357.3107797 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.616831293 V-1 T = -25 °C: 4.983230173 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.107156255 V-1 T = -25 °C: 9.226545613 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.08539736 V-1 T = -25 °C: 16.39514994 V-1 |
Break-through voltage: |
T = +20 °C: 409.0106461 V T = -25 °C: 372.9099323 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history