Show Hamamatsu Avalanche Photo Diode 2318025633
This is all the information about APD 2318025633. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
2318025633 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
F03 |
Break-through voltage: |
415 V |
Voltage for Gain 100 (T=+25°C): |
386.5 V |
Dark current: |
6.7 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
221 |
Position in Box: |
30 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10222 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
21. Aug 2019 |
Sent for analysis after irradiation: |
15. Oct 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
09. Oct 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
12. Oct 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 386.3279123 V T = -25 °C: 350.3835484 V |
Voltage for Gain 150: |
T = +20 °C: 394.3033648 V T = -25 °C: 357.9535738 V |
Voltage for Gain 200: |
T = +20 °C: 398.7379889 V T = -25 °C: 362.2123006 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.372305386 V-1 T = -25 °C: 4.633778117 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.473249065 V-1 T = -25 °C: 9.18228673 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.50609034 V-1 T = -25 °C: 14.30192359 V-1 |
Break-through voltage: |
T = +20 °C: 414.5892666 V T = -25 °C: 378.0304684 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history