Show Hamamatsu Avalanche Photo Diode 2311025090
This is all the information about APD 2311025090. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2311025090 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2311025090/1909020935 |
| Unit: |
#1294 (barcode 1309011025) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E06 |
| Break-through voltage: |
408 V |
| Voltage for Gain 100 (T=+25°C): |
379.9 V |
| Dark current: |
7.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
215 |
| Position in Box: |
43 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10257 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 379.8556458 V T = -25 °C: 344.7091554 V |
| Voltage for Gain 150: |
T = +20 °C: 387.6622952 V T = -25 °C: 352.0449278 V |
| Voltage for Gain 200: |
T = +20 °C: 392.0018815 V T = -25 °C: 356.1636429 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.671886166 V-1 T = -25 °C: 4.709880009 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.300178814 V-1 T = -25 °C: 9.508589499 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.49644305 V-1 T = -25 °C: 14.99971264 V-1 |
| Break-through voltage: |
T = +20 °C: 407.218776 V T = -25 °C: 371.2957461 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history