Show Hamamatsu Avalanche Photo Diode 2311025082
This is all the information about APD 2311025082. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
2311025082 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 2315025413/2311025082 |
Unit: |
#1152 (barcode 1309012879) |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
red |
|
|
Manufacturer information: |
|
Wafer position: |
H09 |
Break-through voltage: |
411 V |
Voltage for Gain 100 (T=+25°C): |
383.6 V |
Dark current: |
10.1 nA |
|
|
Screening Logistics: |
|
Available: |
No |
Storage Box: |
218 |
Position in Box: |
1 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10259 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 382.8042146 V T = -25 °C: 347.4500206 V |
Voltage for Gain 150: |
T = +20 °C: 390.6812662 V T = -25 °C: 354.8941904 V |
Voltage for Gain 200: |
T = +20 °C: 395.0471814 V T = -25 °C: 359.0750251 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.646609979 V-1 T = -25 °C: 4.708765903 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.175680842 V-1 T = -25 °C: 9.419793421 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.33799676 V-1 T = -25 °C: 14.80140595 V-1 |
Break-through voltage: |
T = +20 °C: 409.9901914 V T = -25 °C: 373.9800374 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history