Show Hamamatsu Avalanche Photo Diode 2310024989
This is all the information about APD 2310024989. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
2310024989 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 2310024989/2401025913 |
Unit: |
#1582 (barcode 1309016372) |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
blue |
|
|
Manufacturer information: |
|
Wafer position: |
C05 |
Break-through voltage: |
408 V |
Voltage for Gain 100 (T=+25°C): |
378.7 V |
Dark current: |
5.9 nA |
|
|
Screening Logistics: |
|
Available: |
No |
Storage Box: |
219 |
Position in Box: |
34 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10246 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 378.3646771 V T = -25 °C: 343.2442434 V |
Voltage for Gain 150: |
T = +20 °C: 386.1872423 V T = -25 °C: 350.6190865 V |
Voltage for Gain 200: |
T = +20 °C: 390.5618548 V T = -25 °C: 354.7431331 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.498295229 V-1 T = -25 °C: 4.834263235 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.784247895 V-1 T = -25 °C: 9.866784664 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.24569541 V-1 T = -25 °C: 15.78028815 V-1 |
Break-through voltage: |
T = +20 °C: 406.625116 V T = -25 °C: 370.3903227 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history