Show Hamamatsu Avalanche Photo Diode 2308024768
This is all the information about APD 2308024768. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2308024768 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B10 |
| Break-through voltage: |
414 V |
| Voltage for Gain 100 (T=+25°C): |
385.2 V |
| Dark current: |
6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
91 |
| Position in Box: |
35 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10261 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 385.1433174 V T = -25 °C: 349.5816736 V |
| Voltage for Gain 150: |
T = +20 °C: 392.9603368 V T = -25 °C: 357.0340621 V |
| Voltage for Gain 200: |
T = +20 °C: 397.3052575 V T = -25 °C: 361.2124104 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.550635738 V-1 T = -25 °C: 4.674840083 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.992895773 V-1 T = -25 °C: 9.328787513 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.02388275 V-1 T = -25 °C: 14.66964797 V-1 |
| Break-through voltage: |
T = +20 °C: 412.2699476 V T = -25 °C: 376.2655706 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
