Show Hamamatsu Avalanche Photo Diode 2306024623
This is all the information about APD 2306024623. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2306024623 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F05 |
Break-through voltage: |
411 V |
Voltage for Gain 100 (T=+25°C): |
383 V |
Dark current: |
6 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
351 |
Position in Box: |
30 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10533 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 382.3884626 V T = -25 °C: 347.1967877 V |
Voltage for Gain 150: |
T = +20 °C: 390.2226832 V T = -25 °C: 354.5973278 V |
Voltage for Gain 200: |
T = +20 °C: 394.5798864 V T = -25 °C: 358.7298122 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.481462709 V-1 T = -25 °C: 4.837098796 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.746440911 V-1 T = -25 °C: 9.872298049 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.29747344 V-1 T = -25 °C: 15.73274694 V-1 |
Break-through voltage: |
T = +20 °C: 410.1003546 V T = -25 °C: 374.0579513 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history