Show Hamamatsu Avalanche Photo Diode 2205023970
This is all the information about APD 2205023970. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2205023970 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
C04 |
| Break-through voltage: |
418 V |
| Voltage for Gain 100 (T=+25°C): |
389.6 V |
| Dark current: |
3.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
369 |
| Position in Box: |
48 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10564 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 389.9529241 V T = -25 °C: 354.1141109 V |
| Voltage for Gain 150: |
T = +20 °C: 397.7626384 V T = -25 °C: 361.5845245 V |
| Voltage for Gain 200: |
T = +20 °C: 402.08535 V T = -25 °C: 365.7677127 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.65895026 V-1 T = -25 °C: 4.859167405 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.407757707 V-1 T = -25 °C: 8.982907602 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.82629664 V-1 T = -25 °C: 15.97250041 V-1 |
| Break-through voltage: |
T = +20 °C: 416.6672233 V T = -25 °C: 381.0816779 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
