Show Hamamatsu Avalanche Photo Diode 2013022390 - Archived data from Fri, 09. October 2020 14:35:51 CEST
This is all the information about APD 2013022390. If it is wrong, edit the data.
Subdetector specification: | |
---|---|
Serial: | 2013022390 |
Type: | Hamamatsu Avalanche Photo Diode |
Detector: | unassigned |
Unit: | unassigned |
Preamp: | 0 |
Current location: | Gießen |
Installation information: | |
Label: | none |
Manufacturer information: | |
Wafer position: | D14 |
Break-through voltage: | 408 V |
Voltage for Gain 100 (T=+25°C): | 380.2 V |
Dark current: | 19.7 nA |
Screening Logistics: | |
Available: | Yes |
Storage Box: | 329 |
Position in Box: | 5 |
EP1 batch: | none |
EP1 batch after irradiation: | none |
Shipment: | |
Grid number: | none |
Position in grid: | none |
Arrival for irradiation: | none |
Sent for analysis after irradiation: | none |
Return for assembly: | none |
Irradiation: | |
Date: | none |
Dose used: | none |
Temperature: | none |
Position: | none |
Bias voltage: | none |
Annealing: | |
Date: | none |
Temperature: | none |
Duration: | none |
Measurement results: | |
Voltage for Gain 100: | T = +20 °C: none T = -25 °C: none |
Voltage for Gain 150: | T = +20 °C: none T = -25 °C: none |
Voltage for Gain 200: | T = +20 °C: none T = -25 °C: none |
Gain/Voltage slope at M = 100: | T = +20 °C: none T = -25 °C: none |
Gain/Voltage slope at M = 150: | T = +20 °C: none T = -25 °C: none |
Gain/Voltage slope at M = 200: | T = +20 °C: none T = -25 °C: none |
Break-through voltage: | T = +20 °C: none T = -25 °C: none |
Notes: |
Version history
Time | Author | Change comment |
---|---|---|
16. Apr 2021 22:05:06 CEST | jreher | Updated APD characteristics via API. |
08. Feb 2021 11:11:29 CET | jreher | Updated APD location via API. |
05. Feb 2021 11:30:32 CET | jreher | Updated box and position via API. |
09. Oct 2020 14:35:51 CEST | jreher | Updated APD location via API. |
23. Jun 2016 11:53:56 CEST | Tobias | Imported from Hamamatsu datasheet. |