Show Hamamatsu Avalanche Photo Diode 2013022368
This is all the information about APD 2013022368. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2013022368 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B09 |
| Break-through voltage: |
403 V |
| Voltage for Gain 100 (T=+25°C): |
375.2 V |
| Dark current: |
23.2 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
328 |
| Position in Box: |
47 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
none |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 376.4116076 V T = -25 °C: 342.2843655 V |
| Voltage for Gain 150: |
T = +20 °C: 384.0239634 V T = -25 °C: 349.3952555 V |
| Voltage for Gain 200: |
T = +20 °C: 388.3018452 V T = -25 °C: 353.3493634 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.56703791 V-1 T = -25 °C: 4.699325615 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.100896611 V-1 T = -25 °C: 9.646448362 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.12778427 V-1 T = -25 °C: 17.19873817 V-1 |
| Break-through voltage: |
T = +20 °C: 402.5326228 V T = -25 °C: 367.1811057 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
