Show Hamamatsu Avalanche Photo Diode 2012022317
This is all the information about APD 2012022317. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2012022317 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E07 |
| Break-through voltage: |
403 V |
| Voltage for Gain 100 (T=+25°C): |
375 V |
| Dark current: |
20.3 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
406 |
| Position in Box: |
12 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10638 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
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| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 375.4807795 V T = -25 °C: 341.568382 V |
| Voltage for Gain 150: |
T = +20 °C: 383.1128334 V T = -25 °C: 348.6563278 V |
| Voltage for Gain 200: |
T = +20 °C: 387.3898074 V T = -25 °C: 352.6359206 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.577990039 V-1 T = -25 °C: 4.890524704 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.034706225 V-1 T = -25 °C: 10.14099376 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 15.84717068 V-1 T = -25 °C: 16.46750228 V-1 |
| Break-through voltage: |
T = +20 °C: 402.563167 V T = -25 °C: 367.2114623 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Notes |
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Version history
