Show Hamamatsu Avalanche Photo Diode 2010022222
This is all the information about APD 2010022222. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
2010022222 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
D11 |
Break-through voltage: |
403 V |
Voltage for Gain 100 (T=+25°C): |
374.4 V |
Dark current: |
16.9 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
225 |
Position in Box: |
1 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10216 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
21. Aug 2019 |
Sent for analysis after irradiation: |
15. Oct 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
09. Oct 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
12. Oct 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 374.5645194 V T = -25 °C: 340.7730355 V |
Voltage for Gain 150: |
T = +20 °C: 382.1772314 V T = -25 °C: 347.8606325 V |
Voltage for Gain 200: |
T = +20 °C: 386.4577018 V T = -25 °C: 351.8409908 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.593922654 V-1 T = -25 °C: 5.226820725 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.024942178 V-1 T = -25 °C: 9.989027617 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.85987806 V-1 T = -25 °C: 16.16061441 V-1 |
Break-through voltage: |
T = +20 °C: 402.0859809 V T = -25 °C: 366.8364531 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history