Show Hamamatsu Avalanche Photo Diode 2010022205
This is all the information about APD 2010022205. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2010022205 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
assigned to 2010022205/0902009205 |
Unit: |
#2850 (barcode 1309030408) |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
blue |
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Manufacturer information: |
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Wafer position: |
E08 |
Break-through voltage: |
404 V |
Voltage for Gain 100 (T=+25°C): |
375.9 V |
Dark current: |
12.5 nA |
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Screening Logistics: |
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Available: |
No |
Storage Box: |
232 |
Position in Box: |
38 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10215 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
21. Aug 2019 |
Sent for analysis after irradiation: |
15. Oct 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
09. Oct 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
12. Oct 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 376.228875 V T = -25 °C: 342.1980031 V |
Voltage for Gain 150: |
T = +20 °C: 383.8536166 V T = -25 °C: 349.3296121 V |
Voltage for Gain 200: |
T = +20 °C: 388.1231403 V T = -25 °C: 353.3554055 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.803344553 V-1 T = -25 °C: 5.027052004 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.292740533 V-1 T = -25 °C: 9.519912896 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.51396893 V-1 T = -25 °C: 15.01381581 V-1 |
Break-through voltage: |
T = +20 °C: 403.7199504 V T = -25 °C: 368.4126021 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history