Show Hamamatsu Avalanche Photo Diode 2008022076
This is all the information about APD 2008022076. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2008022076 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
F07 |
Break-through voltage: |
401 V |
Voltage for Gain 100 (T=+25°C): |
372.9 V |
Dark current: |
11.1 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
259 |
Position in Box: |
14 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10233 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
21. Aug 2019 |
Sent for analysis after irradiation: |
15. Oct 2019 |
Return for assembly: |
none |
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Irradiation: |
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Date: |
09. Oct 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
12. Oct 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 373.5550867 V T = -25 °C: 339.4910798 V |
Voltage for Gain 150: |
T = +20 °C: 381.2453437 V T = -25 °C: 346.6267707 V |
Voltage for Gain 200: |
T = +20 °C: 385.5603577 V T = -25 °C: 350.6406684 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.517872627 V-1 T = -25 °C: 4.895542786 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.821368913 V-1 T = -25 °C: 10.0886352 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.25541209 V-1 T = -25 °C: 16.2362553 V-1 |
Break-through voltage: |
T = +20 °C: 400.6800942 V T = -25 °C: 365.2669883 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history