Show Hamamatsu Avalanche Photo Diode 2008022040
This is all the information about APD 2008022040. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2008022040 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
G04 |
| Break-through voltage: |
403 V |
| Voltage for Gain 100 (T=+25°C): |
376.6 V |
| Dark current: |
15.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
204 |
| Position in Box: |
19 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10232 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Aug 2019 |
| Sent for analysis after irradiation: |
15. Oct 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Oct 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
12. Oct 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 375.8911328 V T = -25 °C: 341.5845296 V |
| Voltage for Gain 150: |
T = +20 °C: 383.5996614 V T = -25 °C: 348.7507251 V |
| Voltage for Gain 200: |
T = +20 °C: 387.9095472 V T = -25 °C: 352.765894 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.75097281 V-1 T = -25 °C: 4.880728744 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.462257348 V-1 T = -25 °C: 9.991390832 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.76935634 V-1 T = -25 °C: 16.19252596 V-1 |
| Break-through voltage: |
T = +20 °C: 402.2914261 V T = -25 °C: 366.7119713 V |
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|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
