Show Hamamatsu Avalanche Photo Diode 2005021791
This is all the information about APD 2005021791. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2005021791 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2005021791/3103034039 |
| Unit: |
#3027 (barcode 1309033003) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
B08 |
| Break-through voltage: |
410 V |
| Voltage for Gain 100 (T=+25°C): |
382.1 V |
| Dark current: |
21.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
244 |
| Position in Box: |
34 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10229 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
21. Aug 2019 |
| Sent for analysis after irradiation: |
15. Oct 2019 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
09. Oct 2019 |
| Dose used: |
37 Gy |
| Temperature: |
20 °C |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
12. Oct 2019 |
| Temperature: |
80 °C |
| Duration: |
48 h |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.0442072 V T = -25 °C: 346.6711483 V |
| Voltage for Gain 150: |
T = +20 °C: 389.9363909 V T = -25 °C: 354.1633955 V |
| Voltage for Gain 200: |
T = +20 °C: 394.3385879 V T = -25 °C: 358.3977643 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.553542358 V-1 T = -25 °C: 4.629895103 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.960365796 V-1 T = -25 °C: 9.153414012 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.78903697 V-1 T = -25 °C: 16.01658624 V-1 |
| Break-through voltage: |
T = +20 °C: 405.1278535 V T = -25 °C: 373.5154459 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
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Progression of the current during irradiation
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Version history
