Show Hamamatsu Avalanche Photo Diode 2003021650
This is all the information about APD 2003021650. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
2003021650 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
E03 |
Break-through voltage: |
407 V |
Voltage for Gain 100 (T=+25°C): |
377.5 V |
Dark current: |
21.5 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
204 |
Position in Box: |
25 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10232 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
21. Aug 2019 |
Sent for analysis after irradiation: |
15. Oct 2019 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
09. Oct 2019 |
Dose used: |
37 Gy |
Temperature: |
20 °C |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
12. Oct 2019 |
Temperature: |
80 °C |
Duration: |
48 h |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 377.8490826 V T = -25 °C: 343.202142 V |
Voltage for Gain 150: |
T = +20 °C: 385.794078 V T = -25 °C: 350.5715948 V |
Voltage for Gain 200: |
T = +20 °C: 390.2324033 V T = -25 °C: 354.8342742 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.595483339 V-1 T = -25 °C: 5.24837301 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.968041497 V-1 T = -25 °C: 9.194397579 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.92049876 V-1 T = -25 °C: 19.89606617 V-1 |
Break-through voltage: |
T = +20 °C: 406.6043482 V T = -25 °C: 369.8971298 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history