Show Hamamatsu Avalanche Photo Diode 2002021618
This is all the information about APD 2002021618. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2002021618 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
assigned to 2002021618/2518028949 |
| Unit: |
#1194 (barcode 1309013135) |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
blue |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D01 |
| Break-through voltage: |
406 V |
| Voltage for Gain 100 (T=+25°C): |
378.6 V |
| Dark current: |
17.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
236 |
| Position in Box: |
39 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10231 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 378.9457351 V T = -25 °C: 343.5644288 V |
| Voltage for Gain 150: |
T = +20 °C: 386.876896 V T = -25 °C: 350.9459412 V |
| Voltage for Gain 200: |
T = +20 °C: 391.2959118 V T = -25 °C: 355.0980987 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.578326365 V-1 T = -25 °C: 4.72543652 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.021980749 V-1 T = -25 °C: 9.517721044 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.93289506 V-1 T = -25 °C: 15.10884766 V-1 |
| Break-through voltage: |
T = +20 °C: 405.1171601 V T = -25 °C: 369.1415069 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history