Show Hamamatsu Avalanche Photo Diode 2002021555
This is all the information about APD 2002021555. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
2002021555 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D12 |
| Break-through voltage: |
409 V |
| Voltage for Gain 100 (T=+25°C): |
380.4 V |
| Dark current: |
13.5 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
206 |
| Position in Box: |
14 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10269 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
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|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 380.7027572 V T = -25 °C: 345.0768866 V |
| Voltage for Gain 150: |
T = +20 °C: 388.5509751 V T = -25 °C: 352.4593925 V |
| Voltage for Gain 200: |
T = +20 °C: 392.9016351 V T = -25 °C: 356.6042695 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.701088505 V-1 T = -25 °C: 4.903298281 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.352716838 V-1 T = -25 °C: 9.066121096 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.65602246 V-1 T = -25 °C: 15.81118611 V-1 |
| Break-through voltage: |
T = +20 °C: 408.3089541 V T = -25 °C: 371.9533835 V |
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| Notes: |
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Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
