Show Hamamatsu Avalanche Photo Diode 2001021510
This is all the information about APD 2001021510. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
2001021510 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
A08 |
Break-through voltage: |
410 V |
Voltage for Gain 100 (T=+25°C): |
383.2 V |
Dark current: |
19.3 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
253 |
Position in Box: |
1 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10287 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 383.3031044 V T = -25 °C: 347.785109 V |
Voltage for Gain 150: |
T = +20 °C: 391.1329013 V T = -25 °C: 355.1946229 V |
Voltage for Gain 200: |
T = +20 °C: 395.4814015 V T = -25 °C: 359.3563714 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.530484061 V-1 T = -25 °C: 5.016683511 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.990075605 V-1 T = -25 °C: 9.368378998 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.03719635 V-1 T = -25 °C: 14.82258739 V-1 |
Break-through voltage: |
T = +20 °C: 409.601965 V T = -25 °C: 373.5950387 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history