Show Hamamatsu Avalanche Photo Diode 0717006689
This is all the information about APD 0717006689. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
0717006689 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
Bochum |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
C13 |
Break-through voltage: |
425 V |
Voltage for Gain 100 (T=+25°C): |
396 V |
Dark current: |
7.9 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
299 |
Position in Box: |
46 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10367 |
|
|
Shipment: |
|
Grid number: |
77 |
Position in grid: |
15 |
Arrival for irradiation: |
03. Aug 2017 |
Sent for analysis after irradiation: |
10. Aug 2017 |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
08. Aug 2017 |
Dose used: |
45 Gy |
Temperature: |
20 °C |
Position: |
4 |
Bias voltage: |
396 V (connected) |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 396.0013546 V T = -25 °C: 359.6539833 V |
Voltage for Gain 150: |
T = +20 °C: 403.9112617 V T = -25 °C: 367.2863455 V |
Voltage for Gain 200: |
T = +20 °C: 408.3063157 V T = -25 °C: 371.5736582 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.554993251 V-1 T = -25 °C: 4.541371981 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.010197073 V-1 T = -25 °C: 8.950275247 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.02131964 V-1 T = -25 °C: 15.71113085 V-1 |
Break-through voltage: |
T = +20 °C: 423.8582301 V T = -25 °C: 387.2650393 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history