Show Hamamatsu Avalanche Photo Diode 1912021215
This is all the information about APD 1912021215. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1912021215 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
H10 |
Break-through voltage: |
405 V |
Voltage for Gain 100 (T=+25°C): |
377.4 V |
Dark current: |
8.3 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
257 |
Position in Box: |
38 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10292 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 378.4087693 V T = -25 °C: 342.9369403 V |
Voltage for Gain 150: |
T = +20 °C: 386.2611083 V T = -25 °C: 350.2783413 V |
Voltage for Gain 200: |
T = +20 °C: 390.6220292 V T = -25 °C: 354.4094702 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.448086581 V-1 T = -25 °C: 4.980695807 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.725727768 V-1 T = -25 °C: 9.234369019 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.20362935 V-1 T = -25 °C: 14.59169955 V-1 |
Break-through voltage: |
T = +20 °C: 404.1154369 V T = -25 °C: 368.1480565 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
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Progression of the current during irradiation
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Version history