Show Hamamatsu Avalanche Photo Diode 1912021210
This is all the information about APD 1912021210. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1912021210 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
G09 |
Break-through voltage: |
410 V |
Voltage for Gain 100 (T=+25°C): |
381.3 V |
Dark current: |
12.9 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
257 |
Position in Box: |
33 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10291 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 381.8586165 V T = -25 °C: 346.4275726 V |
Voltage for Gain 150: |
T = +20 °C: 389.6992124 V T = -25 °C: 353.8457632 V |
Voltage for Gain 200: |
T = +20 °C: 394.0537704 V T = -25 °C: 358.0251716 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.653939708 V-1 T = -25 °C: 4.721633362 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.179373225 V-1 T = -25 °C: 9.515454832 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 14.29868995 V-1 T = -25 °C: 14.87516641 V-1 |
Break-through voltage: |
T = +20 °C: 409.3606007 V T = -25 °C: 373.2237572 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history