Show Hamamatsu Avalanche Photo Diode 1911021109
This is all the information about APD 1911021109. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1911021109 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
D03 |
| Break-through voltage: |
406 V |
| Voltage for Gain 100 (T=+25°C): |
377.6 V |
| Dark current: |
19.1 nA |
| |
|
| Screening Logistics: |
|
| Available: |
No |
| Storage Box: |
245 |
| Position in Box: |
23 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10279 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 377.8923817 V T = -25 °C: 342.9694271 V |
| Voltage for Gain 150: |
T = +20 °C: 385.7611726 V T = -25 °C: 350.2759495 V |
| Voltage for Gain 200: |
T = +20 °C: 390.1428684 V T = -25 °C: 354.3973513 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.622571264 V-1 T = -25 °C: 4.98988235 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 9.14686567 V-1 T = -25 °C: 9.291140505 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.18752444 V-1 T = -25 °C: 16.68491338 V-1 |
| Break-through voltage: |
T = +20 °C: 405.7318675 V T = -25 °C: 369.6839917 V |
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| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
