Show Hamamatsu Avalanche Photo Diode 0717006656
This is all the information about APD 0717006656. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
0717006656 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
E01 |
| Break-through voltage: |
416 V |
| Voltage for Gain 100 (T=+25°C): |
386.9 V |
| Dark current: |
6.9 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
299 |
| Position in Box: |
29 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10366 |
| |
|
| Shipment: |
|
| Grid number: |
76 |
| Position in grid: |
3 |
| Arrival for irradiation: |
03. Aug 2017 |
| Sent for analysis after irradiation: |
10. Aug 2017 |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
08. Aug 2017 |
| Dose used: |
45 Gy |
| Temperature: |
20 °C |
| Position: |
3 |
| Bias voltage: |
386.9 V (connected) |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 387.4843616 V T = -25 °C: 351.7856596 V |
| Voltage for Gain 150: |
T = +20 °C: 395.4331199 V T = -25 °C: 359.2299726 V |
| Voltage for Gain 200: |
T = +20 °C: 399.8449136 V T = -25 °C: 363.4304841 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.406611223 V-1 T = -25 °C: 4.948825774 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.45498519 V-1 T = -25 °C: 9.128773081 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 14.51980395 V-1 T = -25 °C: 16.16600103 V-1 |
| Break-through voltage: |
T = +20 °C: 414.6583768 V T = -25 °C: 378.5354262 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
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Progression of the current during irradiation
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Version history
