Show Hamamatsu Avalanche Photo Diode 1911021097
This is all the information about APD 1911021097. If it is wrong, edit the data.
Subdetector specification: |
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Serial: |
1911021097 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
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Installation information: |
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Label: |
none |
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Manufacturer information: |
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Wafer position: |
D06 |
Break-through voltage: |
405 V |
Voltage for Gain 100 (T=+25°C): |
376.3 V |
Dark current: |
20.2 nA |
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Screening Logistics: |
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Available: |
Yes |
Storage Box: |
239 |
Position in Box: |
1 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10275 |
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Shipment: |
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Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
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Irradiation: |
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Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
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Annealing: |
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Date: |
none |
Temperature: |
none |
Duration: |
none |
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Measurement results: |
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Voltage for Gain 100: |
T = +20 °C: 377.1343744 V T = -25 °C: 342.1000936 V |
Voltage for Gain 150: |
T = +20 °C: 384.9609458 V T = -25 °C: 349.3719754 V |
Voltage for Gain 200: |
T = +20 °C: 389.330783 V T = -25 °C: 353.4716727 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.585066165 V-1 T = -25 °C: 4.985364047 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 9.004643867 V-1 T = -25 °C: 9.225639748 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 13.98314767 V-1 T = -25 °C: 16.56510572 V-1 |
Break-through voltage: |
T = +20 °C: 404.3236608 V T = -25 °C: 368.0667089 V |
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Notes: |
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Characteristics
Temperature |
Measurement |
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Progression of the current during irradiation
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Version history