Show Hamamatsu Avalanche Photo Diode 1911021089
This is all the information about APD 1911021089. If it is wrong, edit the data.
| Subdetector specification: |
|
| Serial: |
1911021089 |
| Type: |
Hamamatsu Avalanche Photo Diode |
| Detector: |
unassigned |
| Unit: |
unassigned |
| Preamp: |
0 |
| Current location: |
Bochum |
| |
|
| Installation information: |
|
| Label: |
none |
| |
|
| Manufacturer information: |
|
| Wafer position: |
F10 |
| Break-through voltage: |
411 V |
| Voltage for Gain 100 (T=+25°C): |
383 V |
| Dark current: |
16.6 nA |
| |
|
| Screening Logistics: |
|
| Available: |
Yes |
| Storage Box: |
245 |
| Position in Box: |
43 |
| EP1 batch: |
none |
| EP1 batch after irradiation: |
10280 |
| |
|
| Shipment: |
|
| Grid number: |
none |
| Position in grid: |
none |
| Arrival for irradiation: |
none |
| Sent for analysis after irradiation: |
none |
| Return for assembly: |
none |
| |
|
| Irradiation: |
|
| Date: |
none |
| Dose used: |
none |
| Temperature: |
none |
| Position: |
none |
| Bias voltage: |
none |
| |
|
| Annealing: |
|
| Date: |
none |
| Temperature: |
none |
| Duration: |
none |
| |
|
| Measurement results: |
|
| Voltage for Gain 100: |
T = +20 °C: 382.9248329 V T = -25 °C: 347.1328883 V |
| Voltage for Gain 150: |
T = +20 °C: 390.8363415 V T = -25 °C: 354.5174236 V |
| Voltage for Gain 200: |
T = +20 °C: 395.2516872 V T = -25 °C: 358.7783599 V |
| Gain/Voltage slope at M = 100: |
T = +20 °C: 4.589381681 V-1 T = -25 °C: 4.81131213 V-1 |
| Gain/Voltage slope at M = 150: |
T = +20 °C: 8.985472299 V-1 T = -25 °C: 8.757008651 V-1 |
| Gain/Voltage slope at M = 200: |
T = +20 °C: 13.8529347 V-1 T = -25 °C: 15.00792467 V-1 |
| Break-through voltage: |
T = +20 °C: 410.4014829 V T = -25 °C: 374.1586437 V |
| |
|
| Notes: |
|
Characteristics
| Temperature |
Measurement |
Notes |
| No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
| Upload time |
Notes |
| No data available! |
Upload new progression data...
Version history
