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Show Hamamatsu Avalanche Photo Diode 1910021012 - Archived data from Tue, 11. August 2020 18:08:40 CEST


This is all the information about APD 1910021012. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1910021012
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: C09
Break-through voltage: 408 V
Voltage for Gain 100 (T=+25°C): 379.3 V
Dark current: 11.4 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 210
Position in Box: 27
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 380.3753273 V     T = -25 °C: 344.1302939 V
Voltage for Gain 150: T = +20 °C: 388.2175447 V     T = -25 °C: 349.0447032 V
Voltage for Gain 200: T = +20 °C: 393.224834 V     T = -25 °C: 354.1112311 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.469864889 V-1     T = -25 °C: 12.13288718 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 8.801999793 V-1     T = -25 °C: 9.260509402 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 14.67258772 V-1     T = -25 °C: 23.65861876 V-1
Break-through voltage: T = +20 °C: 407.4047504 V     T = -25 °C: 370.884568 V
   
Notes:


Version history

Time Author Change comment
05. Feb 2021 11:15:23 CET jreher Updated box and position via API.
11. Aug 2020 18:08:40 CEST jreher Updated APD characteristics via API.
21. Jul 2020 14:26:01 CEST jreher Updated APD location via API.
29. Jun 2020 16:05:53 CEST jreher Updated APD batch assignment via API.
23. Jun 2016 11:49:02 CEST Tobias Imported from Hamamatsu datasheet.