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Show Hamamatsu Avalanche Photo Diode 1910021011 - Archived data from Tue, 11. August 2020 18:08:40 CEST


This is all the information about APD 1910021011. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1910021011
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: H09
Break-through voltage: 407 V
Voltage for Gain 100 (T=+25°C): 379.1 V
Dark current: 14.3 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 210
Position in Box: 26
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 379.7453892 V     T = -25 °C: 343.8435623 V
Voltage for Gain 150: T = +20 °C: 387.635107 V     T = -25 °C: 348.022488 V
Voltage for Gain 200: T = +20 °C: 392.6634168 V     T = -25 °C: 352.3583293 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.665243057 V-1     T = -25 °C: 16.89831256 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 9.296599026 V-1     T = -25 °C: 9.104474147 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 15.73248424 V-1     T = -25 °C: 24.89737278 V-1
Break-through voltage: T = +20 °C: 406.9700974 V     T = -25 °C: 370.5036371 V
   
Notes:


Version history

Time Author Change comment
05. Feb 2021 11:15:23 CET jreher Updated box and position via API.
11. Aug 2020 18:08:40 CEST jreher Updated APD characteristics via API.
21. Jul 2020 14:26:01 CEST jreher Updated APD location via API.
29. Jun 2020 16:05:53 CEST jreher Updated APD batch assignment via API.
23. Jun 2016 11:49:02 CEST Tobias Imported from Hamamatsu datasheet.