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Show Hamamatsu Avalanche Photo Diode 1909020990 - Archived data from Tue, 11. August 2020 18:08:39 CEST


This is all the information about APD 1909020990. If it is wrong, edit the data.

Subdetector specification:  
Serial: 1909020990
Type: Hamamatsu Avalanche Photo Diode
Detector: unassigned
Unit: unassigned
Preamp: 0
Current location: Bochum
   
Installation information:  
Label: none
   
Manufacturer information:  
Wafer position: F02
Break-through voltage: 405 V
Voltage for Gain 100 (T=+25°C): 376.6 V
Dark current: 9.9 nA
   
Screening Logistics:  
Available: Yes
Storage Box: 210
Position in Box: 20
EP1 batch: none
EP1 batch after irradiation: none
   
Shipment:  
Grid number: none
Position in grid: none
Arrival for irradiation: none
Sent for analysis after irradiation: none
Return for assembly: none
   
Irradiation:  
Date: none
Dose used: none
Temperature: none
Position: none
Bias voltage: none     
   
Annealing:  
Date: none
Temperature: none
Duration: none
   
Measurement results:  
Voltage for Gain 100: T = +20 °C: 377.5619938 V     T = -25 °C: 342.1807274 V
Voltage for Gain 150: T = +20 °C: 385.4438704 V     T = -25 °C: 345.9760146 V
Voltage for Gain 200: T = +20 °C: 389.8219349 V     T = -25 °C: 349.924146 V
Gain/Voltage slope at M = 100: T = +20 °C: 4.405620995 V-1     T = -25 °C: 4.9099781 V-1
Gain/Voltage slope at M = 150: T = +20 °C: 8.520664247 V-1     T = -25 °C: 18.32085537 V-1
Gain/Voltage slope at M = 200: T = +20 °C: 14.67462791 V-1     T = -25 °C: 17.19692893 V-1
Break-through voltage: T = +20 °C: 404.6428365 V     T = -25 °C: 368.2883644 V
   
Notes:


Version history

Time Author Change comment
05. Feb 2021 11:15:23 CET jreher Updated box and position via API.
11. Aug 2020 18:08:39 CEST jreher Updated APD characteristics via API.
21. Jul 2020 14:26:00 CEST jreher Updated APD location via API.
29. Jun 2020 16:05:53 CEST jreher Updated APD batch assignment via API.
23. Jun 2016 11:49:02 CEST Tobias Imported from Hamamatsu datasheet.