Show Hamamatsu Avalanche Photo Diode 1908020874
This is all the information about APD 1908020874. If it is wrong, edit the data.
Subdetector specification: |
|
Serial: |
1908020874 |
Type: |
Hamamatsu Avalanche Photo Diode |
Detector: |
unassigned |
Unit: |
unassigned |
Preamp: |
0 |
Current location: |
In transit to Mainz |
|
|
Installation information: |
|
Label: |
none |
|
|
Manufacturer information: |
|
Wafer position: |
B05 |
Break-through voltage: |
405 V |
Voltage for Gain 100 (T=+25°C): |
377.2 V |
Dark current: |
20.6 nA |
|
|
Screening Logistics: |
|
Available: |
Yes |
Storage Box: |
246 |
Position in Box: |
7 |
EP1 batch: |
none |
EP1 batch after irradiation: |
10281 |
|
|
Shipment: |
|
Grid number: |
none |
Position in grid: |
none |
Arrival for irradiation: |
none |
Sent for analysis after irradiation: |
none |
Return for assembly: |
none |
|
|
Irradiation: |
|
Date: |
none |
Dose used: |
none |
Temperature: |
none |
Position: |
none |
Bias voltage: |
none |
|
|
Annealing: |
|
Date: |
none |
Temperature: |
none |
Duration: |
none |
|
|
Measurement results: |
|
Voltage for Gain 100: |
T = +20 °C: 377.4451211 V T = -25 °C: 342.0989959 V |
Voltage for Gain 150: |
T = +20 °C: 385.2257093 V T = -25 °C: 349.3972999 V |
Voltage for Gain 200: |
T = +20 °C: 389.5656205 V T = -25 °C: 353.5026415 V |
Gain/Voltage slope at M = 100: |
T = +20 °C: 4.517716862 V-1 T = -25 °C: 4.96709578 V-1 |
Gain/Voltage slope at M = 150: |
T = +20 °C: 8.950345612 V-1 T = -25 °C: 9.30631795 V-1 |
Gain/Voltage slope at M = 200: |
T = +20 °C: 15.82556683 V-1 T = -25 °C: 14.72376495 V-1 |
Break-through voltage: |
T = +20 °C: 404.6082038 V T = -25 °C: 368.3841682 V |
|
|
Notes: |
|
Characteristics
Temperature |
Measurement |
Notes |
No characteristics available! |
Upload new characteristic...
Progression of the current during irradiation
Upload time |
Notes |
No data available! |
Upload new progression data...
Version history